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| SPW47N60C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best R DS(on) in TO 247 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances VDS @ Tjmax RDS(on) ID 650 0.07 47 P-TO247 V A Type SPW47N60C3 Package P-TO247 Ordering Code Q67040-S4491 Marking 47N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature VGS Ptot T j , T stg 20 20 30 415 -55... +150 W C A V 1 I D puls EAS Symbol ID 47 30 141 1800 mJ Value Unit A Page 1 2003-11-06 SPW47N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 47 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=2700, VGS=V DS V DS=600V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA Tsold - Values typ. max. 0.3 62 260 Unit K/W C Values typ. 700 3 0.5 0.06 0.16 0.62 max. 3.9 600 2.1 - Unit V A 25 250 100 0.07 nA Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=30A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-11-06 SPW47N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=350V, ID=47A, V GS=0 to 10V V DD=350V, ID=47A Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=30A V GS=0V, V DS=25V, f=1MHz Values typ. 40 6800 2200 145 193 412 18 27 111 8 max. 165 12 - Unit S pF Effective output capacitance, 2) Co(er) V GS=0V, V DS=0V to 480V pF td(on) tr td(off) tf V DD=380V, V GS=0/13V, ID=47A, RG =1.8, Tj=125 - ns - 24 121 252 5.5 320 - nC V(plateau) V DD=350V, ID=47A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-11-06 SPW47N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.002689 0.005407 0.011 0.054 0.071 0.036 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.001081 0.004021 0.005415 0.014 0.025 0.158 Ws/K Unit Symbol Value typ. Unit VSD t rr Q rr I rrm di rr/dt VGS =0V, I F=IS VR =350V, IF=IS , diF/dt=100A/s Symbol IS I SM Conditions min. TC=25C Values typ. 1 580 23 73 900 max. 47 141 1.2 - Unit A V ns C A A/s Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-11-06 SPW47N60C3 1 Power dissipation Ptot = f (TC) 500 SPW47N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 3 W 400 350 A 10 2 Ptot ID 300 250 200 150 100 50 0 0 10 1 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 280 20V K/W A 10 0 200 10 -1 7.5V ZthJC ID 7V 160 6.5V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 120 6V 80 5.5V 40 5V 4.5V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 0 0 4 8 12 16 20 26 V VDS Page 5 2003-11-06 SPW47N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 160 20V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 0.5 A 6.5V 4V 4.5V 5V RDS(on) 120 0.4 5.5V ID 100 6V 0.35 80 5.5V 0.3 6V 60 5V 0.25 6.5V 20V 40 4.5V 0.2 20 4V 0.15 0 0 4 8 12 16 20 26 V VDS 0.1 0 20 40 60 80 100 120 A 160 ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 47 A, VGS = 10 V 0.38 SPW47N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 280 A 0.32 25C RDS(on) 0.28 200 ID 160 120 150C 0.24 0.2 0.16 0.12 0.08 0.04 0 -60 98% typ 80 40 -20 20 60 100 C 180 0 0 1 2 3 4 5 6 7 8 Tj Page 6 V 10 VGS 2003-11-06 SPW47N60C3 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 47 A pulsed 16 V SPW47N60C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 3 SPW47N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 2 8 6 IF 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 4 2 0 0 40 80 120 160 200 240 280 320 nC 400 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=47A 6000 12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=47 A 10 3 td(off) A/s ns di/dt 4000 10 2 tf td(on) 3000 di/dt(on) tr t 2000 10 1 1000 di/dt(off) 0 0 2 4 6 8 10 12 14 16 RG 20 10 0 0 2 4 6 8 10 12 14 16 20 RG Page 7 2003-11-06 SPW47N60C3 13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V, RG =1.8 10 3 14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=47A 80 td(off) ns V/ns dv/dt(off) 10 2 td(on) 60 dv/dt t 50 10 1 tf 40 tr 30 10 0 20 dv/dt(on) 10 10 -1 0 10 20 30 A ID 50 0 0 2 4 6 8 10 12 14 16 20 RG 15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =1.8 0.4 *) Eon includes SDP06S60 diode commutation losses. 16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=47A 1.4 *) Eon includes SDP06S60 diode commutation losses. mWs mWs 1 E Eoff E 0.8 Eoff 0.2 0.6 Eon* Eon* 0.1 0.4 0.2 0 0 10 20 30 A ID 50 0 0 2 4 6 8 10 12 14 16 20 RG Page 8 2003-11-06 SPW47N60C3 17 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 20 18 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 1800 A 16 14 mJ 1400 EAS -2 -1 0 1 2 IAR 1200 1000 12 10 800 8 6 4 2 0 -3 10 4 600 400 200 0 25 10 10 10 10 10 s 10 tAR 50 75 100 C Tj 150 19 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW47N60C3 20 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 500 V - V(BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 5 6 PAV C 300 100 -20 20 60 100 180 10 Hz f 10 Tj Page 9 2003-11-06 SPW47N60C3 21 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 30 22 Typ. Coss stored energy Eoss=f(VDS) pF Ciss J 10 4 Eoss 10 3 Coss 20 C 15 10 10 2 Crss 5 10 1 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS 23 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS ; ID = 2.7 mA 4.25 V VGS(th) max. 3.25 typ. 2.75 min. 2.25 1.75 1.25 -75 -50 -25 0 25 50 75 100 125 C Tj 175 Page 10 2003-11-06 SPW47N60C3 Definition of diodes switching characteristics Page 11 2003-11-06 SPW47N60C3 P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 12 2003-11-06 SPW47N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2003-11-06 |
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